Intel Corp. said it has recently made advances in developing more efficient tri-gate transistors for high-volume manufacturing.
The Santa Clara, Calif., company said new geometry allows the three-dimensional chip to function at higher speeds and consume less energy than planar, of flat transistors.
Intel expects the chips to go into production for the chip generation coming out in 2009, or 2011. The company will decide on the development timing in the second half of this year.
The next generation 45 nanometer chip, compared with the current 65 nanometer variety, is slated to reach the market in late 2007.
The tri-gate chip uses new geometry and materials allowing transistors to be switched on an off faster and more efficiently by surrounding the current on three sides, so it can be controlled from three different directions at once.
The company plans to present a paper outlining advances in the new technology tomorrow at a conference in Hawaii.
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